| 摘要 |
PURPOSE:To form, with high speed, a thin film which has a wide optical forbidden bandwidth and is excellent in photoelectric characteristics by decomposing silicon compound having, in molecule, unsaturated hydrocarbon radical capable of radical polymerization, by using ultraviolet radiation. CONSTITUTION:A silicon substrate is inserted in a vacuum thin film forming chamber, and heated at a specified temperature; while silicon compound containing, in molecule, unsaturated hydrocarbon radical capable of radical polymerization, e.g., monovinylsilane gas, is supplied, the pressure in the chamber is adjusted by a vacuum discharging means; the gas is decomposed by using a low pressure mercury lamp as a light source to generate ultraviolet radiation; a carbon containing thin film is formed on the substrate. In this case, since the influence of light intensity of the light source necessary for film formation is little, the thin film deposition on a light irradiation window is restrained. Thereby, the carbon-containing thin film which has wide optical band gap and exhibits high photoelectric conductivity can be formed with high speed. |
