| 摘要 |
PURPOSE:To simplify wiring structure by providing, through gate oxide film, an operating layer consisting of polycrystalline silicon on the surface of sidewall of a gate electrode to form TFT(Thin Film Transistor). CONSTITUTION:A polycrystalline silicon layer is formed on the sidewall surface of gate electrode 6 by executing anisotropic etching. A P diffused region 8 of this polycrystalline silicon layer 11 is formed by implantation of boron and the region of the polycrystalline silicon layer 11 where boron is not implanted becomes the P channel region 9. As explained above, an operating layer consisting of the P channel region 9 of TFT and P<+> diffused region 8 is formed on the surface of sidewall of the gate electrode 6 through the gate oxide film 7. Thereby, the wiring structure can be simplified. |
