| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for controlling the resistivity of a silicon carbide sintered product, capable of lowering the resistivity of the silicon carbide sintered product and capable of controlling the resistivity in a wide range. SOLUTION: This silicon carbide sintered product is obtained by mixing α-SiC powder having an average particle diameter of 0.1-10μm and β-SiC powder having an average particle diameter of 0.1-10μm with ultrafine SiC powder having an average particle diameter of <0.1μm and synthesized in a gaseous phase by a plasma CVD method in a desired ratio and subsequently thermally sintering the obtained SiC mixture powder. |
