发明名称 HOSHASENYOREJISUTOOYOBISONOSEIZOHOHOOYOBIPATAANKEISEIHOHO
摘要 Disclosed is a method of forming a pattern by irradiating a resist, which comprises irradiating a resist composed mainly of a polymer or copolymer comprising structural units represented by the following general formula (1): <MATH> wherein R represents a hydrocarbon group containing at least one Si atom, patternwise with an energy beam, and developing the irradiated resist pattern.
申请公布号 JP2659025(B2) 申请公布日期 1997.09.30
申请号 JP19900012640 申请日期 1990.01.24
申请人 FUJITSU KK 发明人 KODACHI AKIKO;TAKECHI SATOSHI
分类号 G03F7/004;G03F7/075;G03F7/26;H01L21/027;H01L21/30;(IPC1-7):G03F7/075 主分类号 G03F7/004
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