| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for producing a silicon single crystal having an arbitrary oxygen concentration, capable of preventing polycrystallization in growth. SOLUTION: This method for producing a silicon single crystal comprises melting a silicon raw material in a decompressed inert atmosphere and pulling up the melt by using a seed crystal. In the production, the single crystal having 1.5×10<18> atoms/cm<3> oxygen concentration is pulled up by using a crucible wholly composed of boron nitride. A quartz is immersed in a silicon melt and a single crystal having an arbitrary oxygen concentration is pulled up.
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