| 摘要 |
The method is for measuring the thickness of a thin oxide film using X-ray photoelectron spectroscopy. The method comprises the steps of: obtaining distribution curves of SiO2, SiO, SiC by radiating X-ray onto the surface of an oxide film using X-ray photoelectron spectroscopy and by measuring the photoelectron emitting from the surface of the oxide film; calculating the intensity of the oxide film by integrating the distribution curves of SiO2 and SiO, and calculating the intensity of a sililated photoresist film on the bottom of the oxide film by integrating the distribution curve of SiC; and calculating the thickness of the oxide film using lnR/K+1 = d/( Osin ) where R is the ratio of the intensity of the oxide film and that of the photoresist film and O= 2.7 nm, K = 2.7.
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