发明名称 |
FABRICATION METHOD OF X-RAY MASK |
摘要 |
A fabrication method of X-ray mask is provided to reduce stress at the time of X-ray exposing using a guard ring. The method comprises the steps of: depositing an oxide layer(6) and a nitride layer(3) on a front and rear side of a silicon wafer(1), respectively; forming a guard ring(7) by etching the oxide layer(6) under CHF3/C2F6/He gas and the silicon wafer(1) under SF6 gas; depositing a silicon nitride(2) on the front side of the silicon wafer(1); defining an PMMA pattern(4) by E-bean exposure; and plating a gold metal(5) and lift-off the PMMA pattern(4). Thereby, it is possible to easily form a fine pattern without generating of stress by using the guard ring(7).
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申请公布号 |
KR0119273(B1) |
申请公布日期 |
1997.09.30 |
申请号 |
KR19930026317 |
申请日期 |
1993.12.03 |
申请人 |
KOREA ELECTRONICS & TELECOMMUNICATIONS RESEARCH INSTITUTE |
发明人 |
CHOE, SANG-SOO;CHON, YOUNG-JIN;YU, HYUNG-JOON |
分类号 |
H01L21/027;(IPC1-7):H01L21/027 |
主分类号 |
H01L21/027 |
代理机构 |
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地址 |
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