| 摘要 |
A forming method of metal interconnections is provided to easily form a metal wiring without additional deposition apparatus. The method comprises the steps of: forming an insulating layer(2) having contact holes on a silicon layer(1); forming a first barrier layer(3) for adhesion by LPCVD(low pressure CVD) on the insulating layer(2); depositing a first Al alloy(7) on the first barrier layer(3) by sputtering at 100-300 deg.C and flowing the first Al alloy(7) at 450-550 deg.C in order to fully filled the contact hole; forming an Al plug(8) by etch-back the Al alloy(7) and the first barrier layer(3); and depositing a second barrier layer(6) and a second Al alloy(9) in order to form a metal wire. Thereby, it is possible to improve contact resistance and reliability for forming Al plug using Al flowing method.
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