Halbleitervorrichtung

摘要

A semiconductor device (1), e.g. a power laser diode ingot, is mounted on a support unit (2). A stress compensating layer (3) is provided between the semiconductor component (1) and support unit (2) and consists of a material for which alpha th is matched to that of the semiconductor component and which has a high modulus of elasticity. Mechanical stresses are almost completely compensated by the stress compensating layer (3) alone within the elastic stretch on range. This facilitates the production of compounds that are resistant to high temperatures and stable through the temperature cycles.