| 摘要 |
<p>A heterolithic microwave integrated circuit (HMIC) has in an adjacent arrangement electrically isolated mesas, silicon conduction members and a dielectric single material between a ground plane bottom surface and a top surface on which circuits and transmission lines are disposed. A very precise thickness of the structure necessary for good impedance matching is achieved. A glass dielectric is vacuum pressed on an anisotropically etched silicon layer fused to a glass substrate. The glass dielectric is polished to a desired thickness. No backfilling of dielectric material is necessary.</p> |
