Bipolar transistor with closed circuit anode and side positioned gate electrode

摘要

The transistor has a semiconductor layer (14) of a first conduction type in the surface of which is formed a cathode (22) and an anode (16). Between the cathode and the anode a first insulating layer (30) is formed with a first gate electrode (28) in the vicinity of the cathode, and a second electrode (36) in the vicinity of the anode. A first impurity region (24) is formed close to the surface of the semiconductor layer below the cathode. A second impurity region (20), of a second conduction type, is formed under the first insulating layer between first gate and the cathode. The second impurity region adjoins the first impurity region. A third impurity region (18) of the second conduction type with a high impurity concentration is formed close to the surface of the semiconductor layer