发明名称 Elektrostatische Halteplatte
摘要 An electrostatic chuck (12) for securing a semiconductor wafer (18) on a pedestal (10) having multiple apertures (46) for the introduction of cooling gas beneath the wafer. The multiple apertures reduce overheating near the wafer edge and provide lower temperature gradients across the wafer. The wafer is held by electrostatic force against a laminate (12) of an electrode layer (22') sandwiched between two dielectric layers (20',24') in such a way that the laminate presents a planar surface to the wafer for a substantial distance beyond the outer edge of the electrode layer. The laminate construction ensures that a large wafer are beyond the outer edge of the electrode is in contact with the laminate, to minimize cooling gas leakage near the edge, and provides a longer useful life by increasing the path length of dielectric material between the electrode layer and potentially damaging plasma material surrounding the chuck. <IMAGE> <IMAGE>
申请公布号 DE69500566(D1) 申请公布日期 1997.09.25
申请号 DE1995600566 申请日期 1995.02.15
申请人 APPLIED MATERIALS, INC., SANTA CLARA, CALIF., US 发明人 SHERSTINSKY, SEMYON, SAN FRANCISCO, CA 94121, US;SHAMOUILIAN, SHAMOUIL, SAN JOSE, CA 95120, US;BIRANG, MANOOCHER, LOS GATOS, CA 95036, US;MAK, ALFRED, UNION CITY, CA 94587, US;TAM, SIMON W., MILPITAS, CA 95035, US
分类号 B23Q3/15;C23C16/458;H01L21/00;H01L21/683;H02N13/00;(IPC1-7):H01L21/00 主分类号 B23Q3/15
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