| 发明名称 |
Thin ferroelectric film element and method for manufacturing the same |
| 摘要 |
<p>A thin ferroelectric film element comprises upper and lower thin electrode films and a thin ferroelectric film formed on a substrate, wherein the thin ferroelectric film comprises at least three layers in which at least one layer has a composition of constituent elements different from those of the other layers and a resistivity higher than that of the other layers, and at least two layers of the others are the same composition of constituent element. <IMAGE></p> |
| 申请公布号 |
EP0797244(A2) |
申请公布日期 |
1997.09.24 |
| 申请号 |
EP19970301838 |
申请日期 |
1997.03.19 |
| 申请人 |
SHARP KABUSHIKI KAISHA |
发明人 |
YOKOYAMA, SEIICHI;ITO, YASUYUKI;USHIKUBO, MAHO;KOBA, MASAYOSHI |
| 分类号 |
H01L21/8247;H01L21/02;H01L21/28;H01L21/314;H01L21/316;H01L21/8242;H01L21/8246;H01L27/105;H01L27/108;H01L27/115;H01L29/78;H01L29/788;H01L29/792;(IPC1-7):H01L21/320 |
主分类号 |
H01L21/8247 |
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