| 摘要 |
<p>PURPOSE:To obtain a functional optical element having strong nonlinearity by holding a semiconductor crystal doped uniformly in space by the heterojunction of specific semiconductor crystal and introducing a quantum well structure thereto. CONSTITUTION:A semiconductor crystal doped irregularly in space is held by a heterojunction (single P-N junction) of second semiconductor crystal in which a band discontinuity in a conduction band and a valence band become a barrier layer to the semiconductor crystal, and a quantum well structure is introduced thereto. For example, a P-N junction of In0.53Ga0.47As lattice- matched to InP is used for a well layer as an InP barrier layer. Further, an In0.52Al0.48As lattice-matched to InP is used as a barrier layer, and the P-N junction of In0.53Ga0.47As can be used similarly for the well layer. Thus, a functional optical element having strong nonlinearity is obtained.</p> |
