| 摘要 |
Disclosed is a light-emitting semiconductor device which comprises an N-layer of N-type nitrogen-Group III compound semiconductor satisfying the formula AlxGayIn1-x-yN, inclusive of x=0, y=0 and x=y=0, a P-layer of P-type nitrogen-Group III compound semiconductor satisfying the formula AlxGayIn1-x-yN, inclusive of x=0, y=0 and x=y=0 and a Zn doped semi-insulating I-layer of nitrogen-Group III compound semiconductor satisfying the formula AlxGayIn1-x-yN, inclusive of x=0, y=0 and x=y=0. The semi-insulating I-layer has a 20 to 3000 ANGSTROM thickness and can emit light in the range of 485 to 490 nm. By employing the I-layer, the light-emitting diode as a whole can emit light in the range of 450 to 480 nm. |
