发明名称 |
Etching high aspect contact holes in solid state devices |
摘要 |
Contact holes through a dielectric are formed by forming a layer of polysilicon having a thickness between 0.02 um and 0.15 um inclusive on the dielectric, forming a layer of resist having a thickness between 0.4 um and 0.6 um inclusive on the layer of polysilicon, making a mask of the layer of resist, using it to form a mask in the layer of polysilicon and etching contact holes in the dielectric by exposing it to etching gasses through the apertures in the polysilicon mask. When the dielectric includes a layer of oxide adjacent the polysilicon mask and a layer of nitride between it and elements of the device, the resist mask is removed prior to etching the contact hole and a gas mixture of: C4F8; one of Ar, H, F; CO; CF4 or C2F6 is used. Contact holes are made through a dielectric to conductors in a substrate by the same method, and desired cross sections are obtained by using a second resist mask and a selective etch for the polysilicon followed by a selective etch for the dielectric. These structures can be stacked and suitable interconnections made by the described method. Contact holes to gate electrodes can be etched using the basic process. <IMAGE> |
申请公布号 |
EP0797242(A2) |
申请公布日期 |
1997.09.24 |
申请号 |
EP19970103150 |
申请日期 |
1997.02.26 |
申请人 |
SIEMENS AKTIENGESELLSCHAFT;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
YANG, CHI-HUA;LAUX, VOLKER B.;GREWAL, VIRINDER S. |
分类号 |
H01L21/28;H01L21/302;H01L21/3065;H01L21/311;H01L21/768 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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