| 摘要 |
The present invention provides an apparatus permitting easy formation of a stable molten region and easy growing of even large-diameter single crystals, with a good-quality of single crystals, in which a floating zone melting apparatus of the infrared-ray concentrated heating type has halogen lamps (1) at one side focal point of four oppositely arranged ellipsoidal reflecting mirrors (2) along orthogonal axes with the inside surfaces thereof as the reflectors, such that infrared-rays reflected from the reflectors are condensed onto the other side focal point, thereby accomplishing heating, wherein the eccentricity of the mirrors is within a range of from 0.4 to 0.65. <IMAGE> |
