Photomask for forming a micropattern of a semiconductor device

摘要

The photomask of the present invention uses chrome patterns formed on a quartz substrate in such a way that the ratio of the line width of chrome pattern to the width of the space between the chrome patterns is 3:5, a phase shift pattern formed at the center of the space between the chrome patterns to have smaller width than the line width of chrome pattern, and auxiliary patterns formed on both sides of the phase shift pattern to have same width together with the phase shift pattern as the line width of each of the chrome patterns.