Sectorized electrically erasable and programmable non-volatile memory device with redundancy

摘要

A sectorized electrically erasable and programmable non-volatile memory device comprises: a plurality of individually-addressable memory sectors (S1-S8), each memory sector comprising an array of memory cells (MC) arranged in rows (WL0-WL255) and columns (BL0-BL255); redundancy columns (RBL0-RBL3) of redundancy memory cells (RMC) for replacing defective columns of memory cells; and a redundancy control circuit (CAM1-CAM4,5-7,12) for storing addresses of the defective columns and activating respective redundancy columns when said defective columns are addressed. Each memory sector comprises at least one respective redundancy column (RBL0-RBL3). The redundancy control circuit comprises at least one memory means (CAM1-CAM4) comprising individually addressable memory locations each one associated to a respective memory sector for storing, individually for each memory sector, addresses of a defective column belonging to the memory sector, and an address recognition means (5,6,7) associated to said memory means for recognizing if a current address supplied to the memory device coincides with a defective column address stored in an addressed one of said memory locations associated to a currently addressed memory sector. <IMAGE>