Field effect transistor having contact layer of transistor gate electrode material

摘要

Improved field effect transistor (FET) structures are described. They include a thin film transistor (TFT), wherein a contact layer directly connects a diffusion region of the TFT to an active site of another device, e.g., another transistor. This invention is especially suitable for TFT's which are built on one or more conductive studs. Static random access memory (SRAM) cells incorporating one or more of the TFT's are also described. Moreover, this invention is directed to methods for preventing or alleviating the problems associated with gouging during formation of contact layers.