| 摘要 |
Low resistant contacts (205) are made from surface of semiconductor component (201), down into the substrate (203), by etching a hole down into the substrate, which by CVD - deposition is filled with a metal, such as tungsten. A good electrical shielding against other components or blocks of components located on the same substrate is obtained by locating - substrate contacts at close distances around a component or a block or a group of components. - Shielding can be obtained vertically upwards by applying a metal layer on top of the component. Metal plugs obtained in this manner can be used for shielding electrical signal conductors in a semiconductor structure. The upper ends of plugs are interconnected by electrically conducting material, of particular material having good electrical conductivity. |
