| 摘要 |
A method of manufacturing a capacitor for use in semiconductor memories is disclosed herein. The present invention includes forming anti-oxidizing regions from dot silicon for use as an oxidation mask to oxidize a polysilicon layer. Further, a silicon oxide layer is used as an etching mask to form a bottom storage node of a capacitor. An etching process is performed to etch a portion of the first polysilicon layer. Next, the silicon oxide layer is removed to define the bottom storage node. Utilizing the bottom storage node structure, the present invention can be used to increase the surface area of the capacitor.
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