发明名称 Thin-film luminescence device utilizing Zn(1-x)MgxS host material compound activated by gadolinium or a gadolinium compound
摘要 The object of the invention is to provide UV light of increased luminous intensity. Layered on one surface of a translucent substrate are a transparent electrode, a first insulating layer, an EL layer, a second insulating layer, and a metal electrode, in that order. A compound of the general formula: Zn(1-x)MgxS is selected as a host material of the EL layer, and Gd or a Gd compound is selected as the luminescence center. The composition ratio x of the compound selected as a host material is selected to be within the range of 0.33</=x<1, and preferably within the range of from 0.4-0.8, inclusive. This selection allows the band gap energy of the host material to be higher than the band gap energy of the luminescence center, thus preventing the absorption of the emitted light by the host material and providing UV light of increased luminous intensity.
申请公布号 US5670839(A) 申请公布日期 1997.09.23
申请号 US19950463730 申请日期 1995.06.05
申请人 SHARP KABUSHIKI KAISHA 发明人 NOMA, MIKIHIRO;MIKAMI, AKIYOSHI
分类号 C09K11/00;C09K11/56;C09K11/77;H05B33/12;H05B33/14;(IPC1-7):H01J1/62 主分类号 C09K11/00
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