| 摘要 |
A method of manufacturing a semiconductor device of the present invention includes steps of introducing mixed gas containing CHF3 and CF4 in which a gas flow ratio of CF4 among CHF3 and CF4 is 30% or lower into an etching atmosphere, setting the pressure in the etching atmosphere to 1.2 Torr or lower and applying radio frequency electric power of 4 W/cm2 or more to a pair of electrodes, thereby to apply patterning with etching to an insulating film using a resist pattern as a mask.
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