| 摘要 |
A semiconductor light-emitting device that enables to realize a satisfactory carrier confinement effect to be capable of stable operation at room temperature. This device includes a QW layer and p- and n-barrier layers placed at each side of the QW layer. The QW layer has an energy level Eva at the top of the valence band and an energy level Eca at the bottom of the conduction band. The p-barrier layer has an energy level Evpb at the top of the valence band and an energy level Ecpb at the bottom of the conduction band. The n-barrier layer has an energy level Evnb at the top of the valence band and an energy level Ecnb at the bottom of the conduction band. The energy levels Eva, Evpb and Evnb at the top of the valence band satisfy the relationship of Eva>Evpb>Evnb. The energy levels Eca, Ecpb and Ecnb at the bottom of the conduction band satisfy the relationship of Eva<Evnb<Evpb. Electrons injected into the QW layer through the n-barrier layer and holes injected into the QW layer through the p-barrier layer are recombined with each other to emit light therefrom.
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