发明名称 |
Method of making contacted body silicon-on-insulator field effect transistor |
摘要 |
Structures and methods are presented for forming a body-substrate connector for an SOI FET. The connector is formed substantially co-aligned with the gate conductor on a side of the device that does not interfere with source and drain. The body is thus held close to the substrate potential and the connector provides a path for majority carriers to quickly leave the body. By contacting the body of the SOI MOSFET device in a manner that does not perturb the charge imaged by the gate, parasitic bipolar effects are eliminated while maintaining the desirable attributes of SOI MOSFET devices, such as low substrate bias sensitivity and steep sub-threshold slope. By forming the connector substantially co-aligned with the gate conductor the connection uses little or no surface area.
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申请公布号 |
US5670388(A) |
申请公布日期 |
1997.09.23 |
申请号 |
US19950542592 |
申请日期 |
1995.10.13 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
MACHESNEY, BRIAN JOHN;MANDELMAN, JACK ALLAN;NOWAK, EDWARD JOSEPH |
分类号 |
H01L29/786;H01L27/12;(IPC1-7):H01L21/84 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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