发明名称 |
Process for cleaning an electrostatic chuck of a plasma etching apparatus |
摘要 |
A method of cleaning an electrostatic chuck, wherein a soft, particle adherent, sheet of material is affixed to a dummy wafer. The dummy wafer is then placed on the electrostatic chuck, and DC power applied to the chuck electrode to build up an electrostatic force between the chuck and wafer. After the power is turned off, the wafer and sheet of material with the adhered particle contamination is removed.
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申请公布号 |
US5671119(A) |
申请公布日期 |
1997.09.23 |
申请号 |
US19960620184 |
申请日期 |
1996.03.22 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
HUANG, YUAN-CHANG;YEN, SHZH-KUEI |
分类号 |
B08B1/00;H01L21/683;H02N13/00;(IPC1-7):H02N13/00 |
主分类号 |
B08B1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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