| 摘要 |
A flash memory has diffused layers extending in a column direction to form channel regions between each two of the diffused layers, field oxide films extending in a row direction to divide the channel regions into separate channels arranged in a matrix, a floating gate disposed for each channel as a split gate, and a strip control gates extending in the row direction and overlying each row of the split floating gate. Each of the floating gates has a lower layer having a lower impurity concentration and an upper layer having a higher impurity concentration. The lower impurity concentration of the lower layer prevents fluctuations in device characteristics while the higher concentration of the upper layer enhances etch rates in two etching process for forming the floating gates of a matrix.
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