发明名称 Forming a thin-film EL element
摘要 A thin-film EL element which does not permit the color of the emitted light to change irrespective of a change in the voltage, which remains chemically stable and which emits light of high brightness even on a low voltage. The element comprises two or more polycrystalline thin light emitting layers (4, 5, 6) and one or more thin insulating layers (3, 7). The interface between a thin film and a thin film constituting a light emitting layer is formed by epitaxial growth, and the electrical characteristics of the element are equivalent to those of a single circuit which includes two Zener diodes (12, 13) connected in series, a capacitor (14) connected in parallel with the serially connected Zener diodes, and a capacitor (15) connected to one end of the capacitor (14).
申请公布号 US5670207(A) 申请公布日期 1997.09.23
申请号 US19960594262 申请日期 1996.01.30
申请人 KOMATSU LTD. 发明人 NIRE, TAKASHI;MIYAKOSHI, ATSUSHI
分类号 H05B33/10;H05B33/12;H05B33/14;(IPC1-7):B05D5/12 主分类号 H05B33/10
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