| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device of OSFET, UGBT and the like, which has structure where a gate finger extending from a gate electrode pad is eliminated and can uniformly apply gate voltage to the gate electrodes of respective unit cells. SOLUTION: The semiconductor device has a first conductive low impurity intensity layer 2 formed on a semiconductor substrate 1 acting as a common drain area, second conductive well areas 3 which are independently arranged in a matrix form in rows and columns that are selectively formed on the surface part of the low impurity intensity layer 2, first conductive source areas 4 formed in a circle on the surface in the well areas 3, source electrodes 8 which are brought into contact with the well areas 3 and the source areas 4 in common, and the gate electrodes 6 provided through gate insulating films 5 so that they cover the spaces between the well areas 3. The gate electrode pad 6 is formed on the insulating films 18 formed on the source electrodes 8, and it is electrically connected with the gate electrodes 6 through openings 17 formed in the insulating film 18.
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