SEMICONDUCTOR INTEGRATED CIRCUIT EQUIPMENT AND METHOD FOR MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To prevent flow of wiring caused by non fiat substrate during reflow of inter-level insulating film in semiconductor integrated circuit equipment with multilayer interconnection. SOLUTION: In a DRAM, wirings 37, 38 and 39 are formed on a bit line BL through a BPSG film 36. A wiring 43 is formed on the wirings 37, 38 and 39 through a BPSG film 42. A dummy wiring 10 formed by the same process as the bit line BL is placed on the lower level adjacent to a memory array. The wirings 37, 38 and 39 are prevented from flowing toward the lower level by a further reflow of the BPSG film 36 at the time of the reflow of the BPSG film 42.