发明名称 PRODUCTION OF QUARTZ CRUCIBLE HAVING LARGE DIAMETER FOR PULLING UP SINGLE CRYSTAL
摘要 PROBLEM TO BE SOLVED: To provide a method for producing a quartz crucible having little deformation under a large quantity of heat fed to the quartz crucible having a large diameter equal to or more than 22 inches and practically having no problems. SOLUTION: This production of a quartz crucible for pulling up a single crystal is to fill powdery silicon dioxide along the inside periphery of a rotating gas permeable mold, heat and fuse the powdery silicon dioxide filled layer from inside, form a base body of a semitransparent outer layer under exhausting by suctioning through the mold wall, form a high temperature gas atmosphere inside of the base body at the same time or after forming the semitransparent outer layer, feed powdery silicon dioxide into the high temperature gas atmosphere, fuse at least a part of it, spread it toward and adhering it to the internal surface of the base body and form a transparent internal layer having a predetermined thickness and essentially containing no bubbles.
申请公布号 JPH09249484(A) 申请公布日期 1997.09.22
申请号 JP19960057924 申请日期 1996.03.14
申请人 SHINETSU QUARTZ PROD CO LTD 发明人 SATO TATSUHIRO;MIZUNO SHIGEO;MATSUMURA MITSUO;WATANABE HIROYUKI
分类号 C03B20/00;C03B19/09;C30B15/10;C30B29/06;C30B35/00;(IPC1-7):C30B15/10 主分类号 C03B20/00
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