| 摘要 |
PROBLEM TO BE SOLVED: To increase the integration degree of memory cells, without increasing the production process by forming first gate electrodes formed in parallel on a semiconductor substrate, interconnection breaking insulation films, and second gate electrodes self-aligned to the 1st electrodes. SOLUTION: First gate electrodes 5 are formed nearly in parallel on a semiconductor substrate 1 of a semiconductor device through a first insulation film 4, interconnection breaking insulation films 14, 15 are formed on desired regions as thick as the first electrode 5, and second gate electrodes 9 are formed self- alignedly in recesses defined by the first electrodes 5 and insulation films 14, 15. Since the electrodes 5 and 9 are formed at a pitch equal to that of the min. working method, and hence a high-density element is realizable to form a large-scale circuit and reduce the cost by reducing the chip size. |
