| 摘要 |
PROBLEM TO BE SOLVED: To prevent corrosion of wires due to moisture absorption and a deterioration of close adhesion by a method wherein, by use of a specific substance as a film material substance, an insulation film including Si, O, F and having a meshes structure of SiO2 is formed by a CVD method. SOLUTION: By using a substance in which activation energy required for replacing an element coupled to Si with F becomes larger when F is coupled to Si than when F is not coupled to Si, a space between conductive areas is electrically separated and an insulation film including Si, O, F and having a meshes structure of SiO2 is formed by a CVD method. Further, when two activation energies are represented byΔEa [kcal/mol] (>0), film manufacturing temperature T[K], and Boltzmann constant KB, by meeting a condition ofΔEa /(kB.T)>=1.5×10<-3> , F added SiO2 films 20, 24 are formed through plasma CVD method. Thus, it is possible to form the F added SiO2 films of low moisture absorption and low permittivity.
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