| 摘要 |
PROBLEM TO BE SOLVED: To enhance a semiconductor device in manufacturing yield and reliability, by a method wherein a capacitor is set uniform in capacitance, and a gate insulating film is enhanced in uniformity of film quality. SOLUTION: A base semiconductor is oxidized through an upper electrode after the electrode is formed, whereby a capacitor electrode is simplified in manufacturing process. That is, a high-melting metal 14 is deposited on a semiconductor layer 13, oxidizing agent is diffused through the high-melting metal, and only the base semiconductor layer is selectively oxidized at an interface, whereby a thin semiconductor oxide film 15 is formed between the high-melting metal 14 and the semiconductor layer 13. By this method, a capacitor comprised in a semiconductor device or the gate insulating film of a MOSFET can be formed. |
