| 摘要 |
PROBLEM TO BE SOLVED: To provide a crystalline silicon film which is formed with good productivity at relatively low temperature, a crystalline silicon film which can be film-formed with good productivity at relatively low temperature, and their manufacturing method. SOLUTION: The material gas containing a silicon-based gas is made into plasma by supplying plasma excitation energy, and crystalline silicon film M is formed, under the plasma, on a film article to be formed S, the film M comprises an interface layer M1 with the film article to be formed S and an upper layer film M2, and, the interface layer M1 is the layer wherein, while the vacuum level near the surface of the article S is kept at 1×10<-3> Torr-1×10<-8> Torr, the surface of the article S is exposed to plasma and, the surface of the article S is exposed to ion beams so that a silicon crystal species is formed. The upper layer film M2 is the one wherein, while the vacuum level near the surface of the article S is kept at 1×10<-3> Torr-1×10<-8> Torr in succession, the surface of the article S is exposed to plasma so that a silicon crystal is grown without being exposed to ion beam radiation.
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