| 摘要 |
<p>PROBLEM TO BE SOLVED: To uniformly apply a bias voltage onto a wafer face even when a pulse-like bias voltage is applied by a method wherein a substance to be processed is mounted to an electrode flat part, and an ion shield part is provided so as to opposingly approach or come into contact with an outer circumferential part of the face side of the substance to be processed. SOLUTION: A face of an electrode block 1 composed of an aluminum alloy is a mounting face of a wafer 2, and an insulation film 3 for attracting static electricity is formed on the face. The insulation film 3 on the face of the electrode is provided in the range wider than an outer diameter of a wafer 2 and further formed at a constant film thickness. Accordingly, an electric resistor value and an electrostatic capacitance value of the insulation film 3 are constant within a face counter to the wafer 2. An ion irradiation shielding ring 8 prevents ions induced into the wafer 2 at a bias voltage from damaging the electrode insulation film 3 counter to an outer circumferential part of the wafer 2. Further, a susceptor 9 is provided in the outer circumferential part of the wafer 2 to position the wafer 2. As a result, there are not ions which are directly incident on the insulation film 3.</p> |
