| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a MOS transistor capable of reducing a leakage current even when a threshold voltage is low. SOLUTION: A semiconductor device includes a MOS transistor on a substrate and a constant voltage power supply Vc so that a voltage in a forward direction is fed between a source (S) of the MOS transistor and the substrate, and the voltage is made smaller than a built-in voltage of a p-n junction diode between the source (S) and the substrate to hold the p-n junction transistor in an off state.</p> |
