FIELD-EFFECT TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To reduce the pellet size of a compound semiconductor MESFET (metallic semiconductor field-effect transistor) and to prevent oscillation. SOLUTION: Active parts (boxed by dotted lines) of a MESFET are provided in the center of a pellet 11 so that they may be inclined toward one side of the pellet 11. A drain electrode pad 19, a gate electrode pad 20 and a source electrode pads 21A and 21B are placed in the four corners of the pellet 11. Especially, the source electrode pads 21A and 21B contact the whole side of source electrodes 15A and 15B and extend laterally.