| 摘要 |
PROBLEM TO BE SOLVED: To easily form a tapered contact hole. SOLUTION: As the first layer of a layer insulating film 115, a nitride carbide film 115a is film-formed by 500Åby a plasma CVD method. As the second and the third layers, an oxide carbide film is film-formed with TEOS gas as material by a plasma CVD method. At that time, for the second layer, an oxide carbide film 115b is film-formed by 5000Åwith rf output of 300W, and for the third layer, an oxide carbide film 115c is film-formed by 1000Åwith rf output of 50W. The layer insulating film 115 in the mulit-layered structure and a minute positive pole oxide 108 formed around a gate electrode are etched respectively, so that the contact hole of the gate electrode is formed into a tapered shape.
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