| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor storage device, which can ensure fast storage electrodes supported fully by a stopper film and opposed wide areas between an insulating film and a plate electrode, and the, semiconductor storage device. SOLUTION: A stopper film 6a is used as an Si3 N4 film having a film thckness of 1500Å or thicker, for example, a sacrifice oxide film 7 is formed on this film 6a, then, a cell contact 8 is formed in a first interlayer insulating film 5 and moreover, storage electrodes 9a are formed. Then, the film 7 is removed and the electrodes 9a are formed into a fin structure, but as the film 6a is thick formed in the film thickness of 1500Å or thicker, the electrodes 9a are supported also at place which come into contact with the sidewall of the formation part of the contact 8, on the film 6a in addition to a place which comes into contact with an element region, on the bottom of the contact 8. As a result, the electrodes 9a can obtain a stably supported state by the stopper film. |
