| 摘要 |
PROBLEM TO BE SOLVED: To prevent the diffusion of impurity in a silicon film into a substrate, to improve the density of impurity in the silicon film and to prevent an element characteristic such as the threshold of a transistor from changing. SOLUTION: A field oxide film 102 and a gate oxide film 103 are formed on a p-type silicon substrate 101. Then, gate electrodes 104 are formed and n-type diffusion layers 105 and 106 are formed. Then, interlayer insulating films 107 and 107a are deposited and contact holes are opened (a). Phosphorus-oxygen dope a-Si films 109 and a phosphorus doped a-Si film 110 are deposited (b). Then, the a-Si films 110 and 109 are patterned and heat-treated. Then, storage node electrodes 111 are formed and capacity insulating films 112 and a cell plate electrode 113 are formed (c). |
