发明名称 PHASE SHIFT MASK BLANK AND PHASE SHIFT MASK
摘要 <p>PROBLEM TO BE SOLVED: To provide a halftone type halftone phase shift mask blank with which the prevention of electrification by the charge accumulation and static electricity at the time of electron beam plotting is made possible by simple film constitution and a halftone type phase shift mask made therefrom. SOLUTION: This halftone type phase shift mask blank (a) has a light translucent film 2a on a transparent substrate 1. The transmittance of this light translucent film 2a to exposure light is 4 to 20% and the transmittance thereof to visible light is 3 to 70%. This halftone type phase shift mask (b) is composed by forming the mask patterns consisting of light transparent parts 3 and light translucent parts 2 on the light translucent film 2a of the halftone type phase shift mask blank (a).</p>
申请公布号 JPH09244215(A) 申请公布日期 1997.09.19
申请号 JP19970030675 申请日期 1997.02.14
申请人 HOYA CORP 发明人 MITSUI HIDEAKI;MATSUMOTO KENJI;YAMAGUCHI YOICHI
分类号 G03F1/32;G03F1/40;G03F1/68;H01L21/027;(IPC1-7):G03F1/08;G03F1/14 主分类号 G03F1/32
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