PHASE SHIFT MASK BLANK AND PHASE SHIFT MASK

摘要

PROBLEM TO BE SOLVED: To provide a halftone type halftone phase shift mask blank with which the prevention of electrification by the charge accumulation and static electricity at the time of electron beam plotting is made possible by simple film constitution and a halftone type phase shift mask made therefrom. SOLUTION: This halftone type phase shift mask blank (a) has a light translucent film 2a on a transparent substrate 1. This light translucent film 2a consists of a film consisting of a transition metal and silicon as well as oxygen and/or nitrogen as its main constituting elements and the transition metal is incorporated at a ratio of 10 to 55atm.% in the light translucent film 2a. This halftone type phase shift mask (b) is composed by forming the mask patterns consisting of light transparent parts 3 and light translucent parts 2 on the light translucent film 2a of the halftone type phase shift mask blank (a).