| 摘要 |
<p>PROBLEM TO BE SOLVED: To form a semiconductor thin film and a metal thin film for light- shielding by using one mask and to form a light-shielding layer and a semiconductor layer in a self-aligned manner by a method wherein a polycrystalline silicon thin film is coated with a resist, an exposure operation and a developing operation are performed from the rear of a substrate and the polycrystalline silicon thin film is patterned by the resist which forms a pattern. SOLUTION: A metal thin film 102 is deposited on a glass substrate 101, and it is patterned to be a prescribed shape. An oxide silicon thin film 103 is deposited on the metal thin film 102. In addition, an amorphous silicon thin film 104 is deposited. The amorphous silicon thin film 104 is melted and crystallized by using an excimer laser 106, and a polycrystal silicon thin film 105 is formed. It is coated with a resist 107, the resist 107 is exposed by ultraviolet rays 108 from the rear of the glass substrate 101. Toy making use of the resist 107 as a mask, the polycrystalline thin film 105 is etched, and the resist 107 is removed. Then, a semiconductor thin film and a metal thin film for light- shielding are formed by using one mask, and a light-shielding layer and a semiconductor layer can be formed in a self-aligned manner.</p> |
