发明名称 MASS MEMORY AND MANUFACTURE OF MASS MEMORY
摘要 PROBLEM TO BE SOLVED: To improve the density of a functional memory by causing a mass memory to include a macroblock constituted by a matrix arrangement of stacked chip blocks, constituting a substrate by a monolithic arrangement, and stacking an interconnection network and a control circuit thereon. SOLUTION: N units of basic blocks are stacked in such a manner that a surface having input/output appears constantly on the same side. M sets of N units of basic blocks are coupled in a direction X perpendicular to a direction Y. A matrix arrangement of M×N units of basic blocks constitutes a macroblock which is machine-worked and abraded on the surface. An interconnection network is prepared on this macroblock 13. Then, to prepare a functional memory, various control chips are mounted on an interconnection network 121 on a mounting region prepared on the last layer of the interconnection network. Thus, a memory of extremely large-scale integration may be provided.
申请公布号 JPH09246460(A) 申请公布日期 1997.09.19
申请号 JP19970053242 申请日期 1997.03.07
申请人 THOMSON CSF 发明人 MIRIAMU UDAARU;FURANSOWA BERUNAARU;JIYANNMARUKU BIYUROO
分类号 G11C11/41;G11C5/00;G11C5/02;H01L21/98;H01L23/538;H01L25/065;(IPC1-7):H01L23/522 主分类号 G11C11/41
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