SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE

摘要

PROBLEM TO BE SOLVED: To realize the increase of the dimension of an electrode area with the roughing treatment of a capacitor electrode by attaching conductive material in microscopic irregularity form on a first electrode that is electrically connected to a source region. SOLUTION: An SiO2 layer 9, an Si3 N4 layer 8 and an SiO2 layer 7 are etched in sequence forming a photoresist on the surface of a silicon substrate 1. A phosphorus doped silicon layer 11 is deposited so that it is connected to a source region 3. A patterning is performed by etching the silicon layer 11 forming a photoresist mask on a capacitor region. A substrate is etched in sequence with the mask of the photoresist film. After removing the photoresist film, an upper stage fin part is formed and a silicon layer 35 that is for joining to a lower stage fin part is deposited on all surface of the lower fin part. Silicon deposition 20 is deposited on the surface of the silicon layer 35 with microscopic irregularity uniformly. Therefore, The dimension of the electrode area is increased and miniaturization can be attained sufficiently.