| 摘要 |
PROBLEM TO BE SOLVED: To accumulate stable ruthenium films and ruthenium oxide films by means of a chemical gaseous growth method using Ru(DMHPD)3 as a raw material so as to form a ruthenium film or a ruthenium oxide film. SOLUTION: A ruthenium film or a ruthenium oxide film is formed by a chemical gaseous growth method using 2,6-dimethyl-3,5-heptanedione ruthenium (Ru(DMHPD)3 ) as a raw material. For instance, after pressure reduction of the inside of a film-forming chamber 10 a substrate 14 heaping ruthenium films is heated by a lamp heater 17, a prescribed flow of Ar gas of a carrier has is made to flow for being introduced into a film-forming chamber 10 together with Ru(DMHPD)3 . Ru(DMHPD)3 is liquefied by heating a raw material container 24 followed by evaporation. Simultaneously with introduction of Ru(DMHPD)3 , H2 gas is introduced into the film-forming chamber 10 from a gas supplying piping 18 so as to react Ru(DMHPD)3 with H2 gas on the substrate 14 so as to heap the ruthenium film on the substrate 14. |
