| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser having a stable self-excited oscillation characteristic and high reliability. SOLUTION: This laser comprises an n-type GaAs substrate 101, active layer 104, and pair of clad layers 103, 105 disposed at both sides of the active layer. It has an emission region and saturable absorptive region in a resonator direction, and absorptive region has a saturable absorptive layer 104s grown at the same time as the active layer. This layer 104s is doped with a p-type dopant at high concn. to reduce the carrier life due to the light absorption, thus obtaining a stable self-excited oscillation characteristic. Thus it is possible to realize a semiconductor laser having a low relative noise intensity over a wide temp. range. |
