HALFTONE PHASE SHIFT PHOTOMASK AND BLANK FOR HALFTONE PHASE SHIFT PHOTOMASK

摘要

PROBLEM TO BE SOLVED: To prevent the etching of the layers in halftone phase shift films at the time of patterning the light shielding film to be formed on the halftone phase shift films by wet etching in the case the halftone phase shift films are composed of multilayered films of a chromium system. SOLUTION: This blank for photomasks has a transparent substrate 101, the halftone phase shift films 104 of the multiple layers contg. at least chromium atoms and fluorine atoms in all the layers 102, 103 formed thereon and the light shielding film 105 which is further formed thereon and does not substantially contain fluorine atoms. This halftone phase shift mask is formed by patterning the blank described above.